The Ultimate Guide to IRFZ44N MOSFET: Pinout, Uses & Datasheet


The IRFZ44N is a popular power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for high-power applications such as motor control, power supplies, and DC-DC converters. Here's an overview of the IRFZ44N:

IRFZ44N Overview:

  • Manufacturer: International Rectifier (now part of Infineon Technologies, acquired in 2015)
  • Part Number: IRFZ44N
  • Transistor Type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
  • Package: TO-220 (Through-Hole)
  • Voltage Rating: Typically rated for around 55V (VDS - Drain-Source Voltage)
  • Current Rating: High current handling capability, often in the range of tens of amperes
  • Rds(on): Low on-state resistance when fully turned on
  • Gate Threshold Voltage: The voltage at which the MOSFET starts to conduct

Key Features:

  • High Power Handling: IRFZ44N can handle significant power due to its low on-state resistance and current capacity.
  • Efficient Switching: Provides fast switching characteristics, making it suitable for power electronics applications.
  • Robust Construction: Designed for reliable and continuous operation in demanding environments.
  • Commonly Available: Widely used and readily available in the market.


  • Switching Applications: Ideal for power switching circuits due to its high current and voltage ratings.
  • Motor Control: Used in motor drive circuits for controlling DC motors and other high-power actuators.
  • Power Supplies: Employed in power supply units for efficient voltage regulation.
  • Inverters: Utilized in DC-AC inverter circuits for converting DC power to AC power.
  • Amplifiers: Used in audio amplifiers and high-power amplification circuits for efficient power handling.

Working Principle:

  • The IRFZ44N operates on the principle of field-effect modulation, where the voltage applied at the gate terminal controls the current flow between the drain and source terminals.
  • When the gate-source voltage exceeds the threshold voltage, the MOSFET conducts and allows current to flow from drain to source.


  • Ensure to check the datasheet for the IRFZ44N provided by the manufacturer for detailed specifications, including voltage ratings, current ratings, switching characteristics, and thermal considerations.
  • Proper heat sinking may be necessary in high-power applications to keep the MOSFET within its operating temperature range.

The IRFZ44N N-Channel MOSFET is a robust and widely used component in power electronics due to its high current and voltage handling capabilities, making it suitable for various high-power applications where efficient switching and power handling are essential.

Features & Specifications

  • N-Channel MOSFET for Small Signals

  • Continuous Drain Current (ID) is 49A at 25°C

  • Pulsed Drain Current (ID-peak) is 160A

  • Minimum Gate Threshold Voltage (VGS-th) is 2V

  • Maximum Gate Threshold Voltage (VGS-th) is 4V

  • Gate-Source Voltage (VGS) is ±20V (max)

  • Maximum Drain-Source Voltage (VDS) is 55V

  • The gate-source voltage, VGS, is at a maximum of ±20V.

  • Another notable feature is the power dissipation, which is a maximum of 94W.

  • Rise time and fall time are approximately 60ns and 45ns, respectively.

  • It is commonly utilized with Arduino due to its low threshold current.

  • Available in TO-220 package.

IRFZ44N Alternatives

IRF2807, IRFB3207, IRFB4710, IRF3205, IRLZ44N, STP55NF06L, and FDP7030L can be considered as alternatives to the popular IRFZ44N MOSFET.

  • IRFZ48NAn enhanced iteration of the IRFZ44N, the IRFZ48N boasts a maximum drain current of 64 amps and a peak voltage rating of 60 volts. Notably, its on-resistance is lower than that of the IRFZ44N, rendering it an apt choice for applications demanding heightened power.

  • IRFB3207The IRFB3207 is a power MOSFET known for its high current-carrying capability and low on-state resistance. It can be considered an alternative to the IRFZ44N in applications requiring robust switching performance and efficient power handling. Both MOSFETs share similar characteristics, making the IRFB3207 a suitable substitute.

  • IRFB4710: The IRFB4710 is another MOSFET alternative to the IRFZ44N. It features a high current rating and low conduction losses, making it suitable for applications where efficient power switching is essential. The IRFB4710 can be used in circuits requiring a MOSFET with performance characteristics comparable to the IRFZ44N.

  • IRF3205: Positioned as a favored selection, the IRF3205 power MOSFET transistor can manage up to 55 volts and a maximum drain current of 110 amps. Its on-resistance is notably lower than that of the IRFZ44N, establishing it as an excellent choice for high-power applications.

  • IRLZ44N: A variant of the IRFZ44N tailored for digital circuits and microcontrollers, the IRLZ44N obviates the need for an external gate driver circuit. Additionally, it exhibits lower resistance than the IRFZ44N and can accommodate a maximum voltage of 55 volts.

  • STP55NF06LEngineered by STMicroelectronics, this power MOSFET transistor boasts a maximum voltage tolerance of 60 volts and can handle a peak drain current of 50 amps. Its on-resistance is lower than that of the IRFZ44N, positioning it as a fitting choice for diverse power electronic applications.

  • FDP7030L: Crafted by Fairchild Semiconductor, the FDP7030L excels in high-power scenarios, featuring a maximum voltage rating of 100 volts and a peak drain current of 60 amps. Notably, its on-resistance is lower than that of the IRFZ44N.

When seeking a substitute for the IRFZ44N power MOSFET transistor, exercise diligence in selecting alternatives that align with the voltage and current prerequisites, on-resistance, and gate capacitance of your application. Always refer to the datasheet of any alternative component to ensure seamless compatibility.

Where to Use IRFZ44N MOSFET?

The IRFZ44N MOSFET finds application in various scenarios where high-power switching or amplification is required. Here are some common areas where the IRFZ44N MOSFET can be effectively utilized:

1. Power Supply Units:

  • Switching Regulators: In buck, boost, and buck-boost converters for efficient voltage regulation.
  • Linear Power Supplies: In linear regulators for controlling voltage output.

2. Motor Control:

  • DC Motor Drives: To control speed and direction of DC motors efficiently.
  • Brushless DC Motor Control: In applications requiring precise control of brushless DC motors.

3. Lighting Systems:

  • LED Drivers: For controlling LED brightness in lighting applications.
  • Halogen Lamp Control: To regulate current and power in halogen lamps.

4. Audio Amplifiers:

  • Class-AB Amplifiers: In power stages of audio amplifiers for high-power audio amplification.
  • High-Fidelity Audio Systems: In high-power audio systems for efficient signal amplification.

5. Automotive Electronics:

  • Automotive Lighting: For controlling headlight brightness and other automotive lighting applications.
  • Electronic Ignition Systems: In ignition control circuits for vehicles.

6. Power Inverters:

  • DC-AC Power Inverters: Inverting DC power sources to AC in applications like UPS systems.
  • Solar Power Systems: In solar inverters for converting DC solar energy to usable AC power.

7. Switching Applications:

  • Relay Replacement: To replace mechanical relays in solid-state switching applications.
  • Electronic Switching Circuits: In various high-power electronic switching circuits.

8. Heater Control:

  • Heating Element Control: For modulating power to resistive heating elements.
  • Temperature Control: In thermostatic control circuits for regulating temperature.

Important Note:

  • Heat Dissipation: Ensure proper heat sinking for the MOSFET, especially in high-current applications, to prevent overheating and ensure reliable operation.
  • Drive Circuitry: Use appropriate gate drive circuitry to ensure fast switching speeds and efficient operation of the MOSFET.

The IRFZ44N MOSFET is best suited for applications where high power handling, efficient switching characteristics, and robust performance are required. Its versatility makes it a popular choice in a wide range of electronic systems across various industries.

What is the Difference between IRLZ44N and IRFZ44N MOSFET?

The IRLZ44N and IRFZ44N are both N-channel MOSFETs produced by Infineon Technologies (previously International Rectifier). While they may appear similar due to their part numbers, there are important differences between these components that affect their performance and application. Here are the key distinctions between the IRLZ44N and IRFZ44N MOSFETs:


  1. Logic-Level Gate Drive:
    • The IRLZ44N is specifically designed to operate with logic-level gate drive signals, meaning it can fully turn on with lower voltage levels (e.g., 5V), making it suitable for use in microcontroller-based circuits without needing additional driver circuits.
  2. Low Gate Threshold Voltage:
    • The gate threshold voltage of the IRLZ44N is typically lower compared to the IRFZ44N, allowing it to be fully enhanced with lower gate-source voltages.
  3. Drive Voltage Compatibility:
    • Ideal for applications where the control circuitry operates at lower voltages (e.g., 3.3V or 5V) and requires a MOSFET that can be fully switched on with these voltages.


  1. Standard Gate Drive Voltage:
    • The IRFZ44N operates with standard gate drive voltages (typically around 10V to 15V), hence requiring a higher gate-source voltage to fully turn it on compared to the IRLZ44N.
  2. Gate Threshold Voltage:
    • The gate threshold voltage of the IRFZ44N is typically higher compared to the IRLZ44N, which means it requires a higher voltage to drive the MOSFET into its fully conducting state.
  3. Higher Input Voltage Tolerance:
    • Suited for applications where the gate drive signal is at a higher voltage level and where a logic-level drive is not required.

Common Considerations for Both:

  • Current and Voltage Ratings: Both MOSFETs have high current and voltage ratings, ideal for power applications.
  • Package Type: They typically come in the same TO-220 package format.
  • On-Resistance: Both MOSFETs typically have low on-resistance when fully turned on.

Application Differences:

  • IRLZ44N: Suitable for applications where you have limited drive voltage available, such as in low-voltage circuits or when directly controlled by microcontrollers.
  • IRFZ44N: Better suited for applications where standard gate drive voltages are available and where compatibility with higher drive voltages is required.

When selecting between the IRLZ44N and IRFZ44N MOSFETs, consider the voltage levels of your driving circuit, the gate drive requirements, and the overall application needs to choose the most appropriate component for your design.

IRFZ44N Datasheet

Download IRFZ44N Datasheet PDF.


The IRFZ44N power MOSFET transistor stands out as a versatile option for demanding applications in the realm of power electronics. Boasting impressive current and voltage ratings, coupled with low on-resistance and rapid switching capabilities, it has earned widespread acclaim among professionals seeking precise control over their electrical systems. To optimize performance when employing the IRFZ44N, adhere to recommended best practices: meticulously verify your connection methodologies, tailor your plans to meet appliance specifications, and attentively monitor gate voltages and load thresholds during operation. By doing so, you can harness peak efficiency from your device with minimal associated risk!