The BSS123NH6327XTSA1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. Here is a detailed introduction to the BSS123NH6327XTSA1 MOSFET:


1. Overview:

  • Manufacturer: Infineon Technologies
  • Part Number: BSS123NH6327XTSA1
  • Type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
  • Package: SOT-23-3 (Small Outline Transistor Package with 3 Leads)

2. Key Specifications:

  • Voltage Rating (V<sub>ds</sub>): 100V (Maximum Drain-Source Voltage)
  • Current Rating (I<sub>d</sub>): 190mA (Continuous Drain Current)
  • Package Type: SOT-23-3, a commonly used surface-mount package
  • Threshold Voltage (V<sub>th</sub>): Typically around 1V - 3V
  • Low On-Resistance (R<sub>ds(on)</sub>): Efficient conduction in the ON state
  • DataSheet

    BSS123NH6327XTSA1 PDF

3. Features and Applications:

  • MOSFET Type: N-Channel MOSFET suitable for low-power switching applications.
  • Voltage and Current Ratings: Designed for applications requiring a 100V V<sub>ds</sub> and 190mA I<sub>d</sub>.
  • Package Type: SOT-23-3 package, widely used in various electronic circuits.
  • Low Threshold Voltage: Enables efficient switching with low gate voltage.
  • Enhancement Mode: Normally-off transistor that requires a positive gate voltage to conduct.

4. Package Information:

  • SOT-23-3 Package: Compact and versatile for surface-mount applications.

5. Applications:

  • Switching Circuits: Suitable for low-power switching applications.
  • Voltage Regulation: Used in various voltage regulation circuits.
  • Signal Switching: Commonly employed for signal routing applications.
  • Battery Management: Useful component in battery management systems.
  • Load Switching: Efficient for controlling power to loads.

6. Advantages:

  • Low Power Consumption: Ideal for energy-efficient circuits.
  • Fast Switching Speed: Ensures quick response in switching operations.
  • Space-Efficient Design: Compact SOT-23-3 package saves board space.
  • Versatile Usage: Applicable in a wide range of low-power electronic applications.

The BSS123NH6327XTSA1 MOSFET by Infineon Technologies is designed for low-power switching applications that require a 100V maximum drain-source voltage, 190mA continuous drain current, and efficient switching characteristics. With its compact SOT-23-3 package and reliable performance, it is suitable for various electronic circuits that demand space efficiency, energy efficiency, and low power consumption.