The BSS123NH6327XTSA1 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. Here is a detailed introduction to the BSS123NH6327XTSA1 MOSFET:
1. Overview:
- Manufacturer: Infineon Technologies
- Part Number: BSS123NH6327XTSA1
- Type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
- Package: SOT-23-3 (Small Outline Transistor Package with 3 Leads)
2. Key Specifications:
- Voltage Rating (V<sub>ds</sub>): 100V (Maximum Drain-Source Voltage)
- Current Rating (I<sub>d</sub>): 190mA (Continuous Drain Current)
- Package Type: SOT-23-3, a commonly used surface-mount package
- Threshold Voltage (V<sub>th</sub>): Typically around 1V - 3V
- Low On-Resistance (R<sub>ds(on)</sub>): Efficient conduction in the ON state
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DataSheet
3. Features and Applications:
- MOSFET Type: N-Channel MOSFET suitable for low-power switching applications.
- Voltage and Current Ratings: Designed for applications requiring a 100V V<sub>ds</sub> and 190mA I<sub>d</sub>.
- Package Type: SOT-23-3 package, widely used in various electronic circuits.
- Low Threshold Voltage: Enables efficient switching with low gate voltage.
- Enhancement Mode: Normally-off transistor that requires a positive gate voltage to conduct.
4. Package Information:
- SOT-23-3 Package: Compact and versatile for surface-mount applications.
5. Applications:
- Switching Circuits: Suitable for low-power switching applications.
- Voltage Regulation: Used in various voltage regulation circuits.
- Signal Switching: Commonly employed for signal routing applications.
- Battery Management: Useful component in battery management systems.
- Load Switching: Efficient for controlling power to loads.
6. Advantages:
- Low Power Consumption: Ideal for energy-efficient circuits.
- Fast Switching Speed: Ensures quick response in switching operations.
- Space-Efficient Design: Compact SOT-23-3 package saves board space.
- Versatile Usage: Applicable in a wide range of low-power electronic applications.
The BSS123NH6327XTSA1 MOSFET by Infineon Technologies is designed for low-power switching applications that require a 100V maximum drain-source voltage, 190mA continuous drain current, and efficient switching characteristics. With its compact SOT-23-3 package and reliable performance, it is suitable for various electronic circuits that demand space efficiency, energy efficiency, and low power consumption.
