BSS123,215 Nexperia MOSFET N-CH 100V 150MA TO236AB


The BSS123,215 is an N-channel MOSFET manufactured by Nexperia, a semiconductor company. Here are the key specifications and details about this component:


  • Manufacturer: Nexperia
  • Part Number: BSS123,215
  • Type: N-Channel MOSFET
  • Voltage Rating: 100V
  • Current Rating: 150mA
  • Package: TO-236AB (SOT23-3)
  • DataSheet

    BSS123,215 PDF

Key Features:

  1. N-Channel MOSFET: The BSS123,215 is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor where current flows from the drain to the source when a voltage is applied at the gate.

  2. Voltage Rating (100V): This MOSFET can handle a maximum drain-source voltage of 100V.

  3. Current Rating (150mA): The maximum continuous drain current the MOSFET can handle is 150mA.

  4. Package (TO-236AB - SOT23-3): The TO-236AB package, also known as SOT23-3, is a small surface-mount package with three leads.

Main Specifications and Uses:

  • Switching Applications: N-channel MOSFETs like the BSS123,215 are commonly used in switching applications in electronic circuits.

  • Amplification: MOSFETs can also be used for amplification in specific circuit configurations.

  • Voltage Regulation: These devices can be utilized in voltage regulation circuits and low-power applications.

Working Principle:

  • Applying a voltage at the gate terminal creates an electric field that modulates the conductivity between the source and drain terminals.

  • For the N-channel MOSFET, a positive voltage applied at the gate with respect to the source allows current flow from the drain to the source.

Typical Applications:

  • Low-Power Switching Circuits: Ideal for low-power circuit applications like signal routing or light load switching.

  • Level Shifting: Useful in level-shifting applications where input signals need to be translated to a higher or lower voltage.

  • Voltage-Level Translation: Helpful for converting logic levels within digital circuits.

  • Load Switching: Can be used to control the switching of loads in various electronic systems.

Implementation Considerations:

  • Gate Voltage: Ensure the gate voltage stays within the limits specified to avoid damage.

  • Current Limits: Stick to the specified maximum drain current to prevent overloading the MOSFET.

  • Heat Dissipation: Consider heat dissipation requirements for applications with higher currents.

  • Protection Measures: Implement protective features like flyback diodes for inductive loads to avoid voltage spikes.

Before integrating the BSS123,215 N-channel MOSFET into your circuit design, refer to the datasheet provided by Nexperia for detailed specifications, application notes, and usage guidelines to ensure reliable and optimal performance in your specific electronic application.